DTC114EB / dtc114em / dtc114ee / dtc114eua / dtc114eka z applications inverter, interface, driver z features 1) built-in bias resistors enable the confi guration of an inverter circuit without c onnecting external input resistors (see equ ivalent circuit). 2) the bias resistors consist of thin-film resistors with comple te isolation to allow negative biasing of the input. they also have the advantage of almost completely eliminating parasitic effects. 3) only the on/off conditions need to be set for operation, making the device design easy. z structure npn epitaxial planar silicon transistor (resistor built-in type) z dimensions (unit : mm) abbreviated symbol : 24 abbreviated symbol : 24 abbreviated symbol : 24 abbreviated symbol : 24 abbreviated symbol : 24 dtc114em dtc114ee each lead has same dimensions each lead has same dimensions each lead has same dimensions each lead has same dimensions each lead has same dimensions dtc114eua (1) in (2) gnd (3) out rohm : vmt3 (1) gnd (2) in (3) out rohm : emt3 1.6 0.7 0.15 0.1min. 0.55 0.2 1.6 1.0 0.3 0.8 ( 2 ) 0.5 0.5 ( 3 ) 0.2 ( 1 ) (1) gnd (2) in (3) out rohm : smt3 eiaj : sc-59 dtc114eka (1) gnd (2) in (3) out rohm : umt3 eiaj : sc-70 (3) 0.32 0.8 1.2 0.13 0.5 0.22 0.4 0.4 1.2 0.8 0.2 0.2 ( 2 ) ( 1 ) 0.2 0.15 0.1min. 0.9 0.7 1.25 2.1 0.3 ( 3 ) 0.65 ( 2 ) 2.0 1.3 ( 1 ) 0.65 ( 2 ) ( 1 ) 2.8 1.6 0.4 ( 3 ) 2.9 1.9 0.95 0.95 0.8 0.15 0.3min. 1.1 (1) in (2) gnd (3) out rohm : vmn3 DTC114EB 0.22 0.8 0.1 1.0 0.1 0.16 0.6 0.35 (1) (2) (3) 0.37 0.17 product specification 1 of 2 4008-318-123 sales@twtysemi.com http://www.twtysemi.com
z packaging specifications z equivalent circuit tl umt3 emt3 smt3 dtc114ee dtc114em DTC114EB part no. dtc114eua 3000 t2l vmt3 8000 t2l vmn3 8000 t106 3000 t146 3000 dtc114eka ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? package packaging type taping taping taping taping taping code basic ordering unit (pieces) z absolute maximum ratings (ta=25 c) limits parameter symbol v cc 150 200 50 ? 10 to + 40 50 100 150 ? 55 to + 150 dtc114ee dtc114em DTC114EB dtc114eua dtc114eka v v ma mw c c v in i o i c(max.) p d tj tstg unit supply voltage input voltage output current power dissipation junction temperature storage temperature z electrical characteristics (ta=25 c) parameter symbol v i(off) v i(on) v o(on) i i i o(off) r 1 g i r 2 /r 1 f t min. ? 3 ? ? ? 7 30 0.8 ? ? ? 0.1 ? ? 10 ? 1 250 0.5 ? 0.3 0.88 0.5 13 ? 1.2 ? v v cc = 5v, i o = 100 a v o = 0.3v, i o = 10ma i o /i i = 10ma/0.5ma v i = 5v v cc = 50v, v i = 0v v o = 5v, i o = 5ma v ce = 10v, i e =? 5ma, f = 100mhz ? v ma a k ? ? ?? ? mhz typ. max. unit conditions input voltage output voltage input current output current input resistance dc current gain resistance ratio transition frequency ? characteristics of built-in transistor r 1 r 2 in gnd out in r 1 =r 2 =10k ? gnd out 2 of 2 4008-318-123 sales@twtysemi.com http://www.twtysemi.com DTC114EB / dtc114em / dtc114ee / dtc114eua / dtc114eka product specification
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